unmetalized surface
未金属化表面
be unmetalized
未金属化
unmetalized parts
未金属化部件
unmetalized condition
未金属化状态
keeping unmetalized
保持未金属化
unmetalized steel
未金属化钢
unmetalized layer
未金属化层
unmetalized state
最初未金属化
initially unmetalized
未金属化组件
unmetalized components
the unmetalized surface was surprisingly smooth to the touch.
未金属化的表面出乎意料地光滑。
after the etching process, the silicon wafer remained largely unmetalized.
蚀刻过程后，硅片大部分仍未金属化。
we need to ensure the unmetalized areas are properly insulated.
我们需要确保未金属化的区域得到适当的绝缘。
the unmetalized portion of the circuit board will house the components.
电路板的未金属化部分将容纳组件。
careful cleaning is required to remove residue from the unmetalized regions.
需要仔细清洁以去除未金属化区域的残留物。
the unmetalized substrate provides a good base for adhesion.
未金属化的基板为粘合提供了一个良好的基础。
we are investigating the properties of unmetalized gallium arsenide.
我们正在研究未金属化的砷化镓的特性。
the unmetalized layer protects the underlying material from corrosion.
未金属化的层保护底层材料免受腐蚀。
the process leaves a significant portion of the device unmetalized.
该工艺使设备的大部分区域未金属化。
testing the electrical conductivity of the unmetalized silicon is crucial.
测试未金属化硅的导电性至关重要。
the unmetalized area allows for future component attachment.
未金属化的区域允许将来连接组件。
unmetalized surface
未金属化表面
be unmetalized
未金属化
unmetalized parts
未金属化部件
unmetalized condition
未金属化状态
keeping unmetalized
保持未金属化
unmetalized steel
未金属化钢
unmetalized layer
未金属化层
unmetalized state
最初未金属化
initially unmetalized
未金属化组件
unmetalized components
the unmetalized surface was surprisingly smooth to the touch.
未金属化的表面出乎意料地光滑。
after the etching process, the silicon wafer remained largely unmetalized.
蚀刻过程后，硅片大部分仍未金属化。
we need to ensure the unmetalized areas are properly insulated.
我们需要确保未金属化的区域得到适当的绝缘。
the unmetalized portion of the circuit board will house the components.
电路板的未金属化部分将容纳组件。
careful cleaning is required to remove residue from the unmetalized regions.
需要仔细清洁以去除未金属化区域的残留物。
the unmetalized substrate provides a good base for adhesion.
未金属化的基板为粘合提供了一个良好的基础。
we are investigating the properties of unmetalized gallium arsenide.
我们正在研究未金属化的砷化镓的特性。
the unmetalized layer protects the underlying material from corrosion.
未金属化的层保护底层材料免受腐蚀。
the process leaves a significant portion of the device unmetalized.
该工艺使设备的大部分区域未金属化。
testing the electrical conductivity of the unmetalized silicon is crucial.
测试未金属化硅的导电性至关重要。
the unmetalized area allows for future component attachment.
未金属化的区域允许将来连接组件。
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